SCT Transphorm demonstrating 99% efficiency power switching with 1200V GaN power transistor

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At the International Symposium on Power Semiconductor Devices and ICs (ISPSD 2022) in Vancouver, Canada (22-26 May), Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC- and AEC-Q101-qualified gallium nitride (GaN) field-effect transistors (FETs) for high-voltage power conversion — is to demonstrate R&D results from its 1200V GaN device...

Source: http://www.semiconductor-today.com/news ... 0222.shtml