Power semiconductor maker ROHM says that its new GNE10xxTB series of 150V gallium nitride (GaN) high-electron-mobility transistors (HEMTs) increases...
At the 37th annual IEEE Applied Power Electronics Conference and Exposition (APEC 2022) in Houston, TX, USA (20-24 March), GaN Systems Inc of Ottawa,...
At the 37th annual IEEE Applied Power Electronics Conference and Exposition (APEC 2022) in Houston, TX, USA (20-24 March), GaN Systems Inc of Ottawa,...
NXP Semiconductors N.V. of Eindhoven, The Netherlands has announced a collaboration with Hitachi Energy to accelerate the adoption of silicon carbide...
Gallium nitride (GaN) power integrated circuit firm Navitas Semiconductor of El Segundo, CA, USA and Dublin, Ireland has announced a 20-year limited...
Sandia National Laboratories has fabricated and tested a gallium nitride (GaN)-based electronic device that can shunt excess electricity within a few...
Infineon Technologies AG of Munich, Germany has launched a new family of CoolSiC 650V silicon carbide (SiC) MOSFETs to deliver reliable, easy-to-use...
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